San Jose, Calif.—Integrated Silicon Solution Inc. has introduced a high speed, low power 256Kx32, 8-Mbit, asynchronous SRAM, the IS61WV25632, with access times of 8nS.
The IS61WV25632 gives the designer a high speed device that uses low power technology to minimize power consumption and is available in both 3.3V and 1.8V versions.
The IS61WV25632 is the third in a broad range of 8-Mbit SRAMs that ISSI is developing including a variety of organizations, voltage and temperature ranges. It is targeted for networking, telecommunications, industrial and automotive applications requiring a high density, high speed, fully random access memory. ISSI previously introduced the 512KX16 and 1MX8 versions of this 8-Mbit SRAM. ISSI now offers a broad range of asynchronous SRAMs from 64-Kbit to 16-Mbit.
The IS61WV25632ALL operates from 1.65V to 2.2V and the IS61WV25632BLL operates from 2.4V to 3.6V. Both are available in lower power versions, the IS61WV25632ALS and IS61WV25632BLS respectively, with standby currents as low as 0.8mA.
Pricing: For quantities of 10,000, the IS61WV25632A/B, in a 90 ball miniBGA package with a -40°C to 85°C operating range, is priced at $7.
Availability: Samples are available now with volume production shipments beginning in the fourth quarter of 2008. Samples of an automotive version of the IS61WV25632 will also be available in Q4, 2008.
Datasheet: Click here.
ISSI, www.issi.com.
